tm february 2007 FDMB668P p-channel 1.8v logic level powertrench ? mosfet ?2007 fairchild semiconductor corporation FDMB668P rev.b www.fairchildsemi.com 1 FDMB668P p-channel 1.8v logic level powertrench ? mosfet -20v, -6.1a, 35m ? features ? max r ds(on) = 35m ? at v gs = -4.5v, i d = -6.1a ? max r ds(on) = 50m ? at v gs = -2.5v, i d = -5.1a ? max r ds(on) = 70m ? at v gs = -1.8v, i d = -4.3a ? excellent for portable application at v gs = -1.8v ? thin profile - maximum height = 0.8mm ? rohs compliant general description FDMB668P is excellent for load switch and dc-dc conversion among portable electronics. it achieves an optimal balance among efficiency, thermal transfer and small form by integrating a p-channel mosfet with minimi zed on-state resistance into a microfet 3x1.9 package. when optimizing the dimension of portable applications, this little device offers a very efficient solution. applications ? load switch in: -hdd -portable gaming, mp3 -notebook ? dc/dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 8 v i d drain current -continuous (note 1a) -6.1 a -pulsed -40 p d power dissipation (note 1a) 1.9 w power dissipation (note 1b) 0.8 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 65 c/w r ja thermal resistance, junction to ambient (note 1b) 165 device marking device package reel size tape width quantity 668 FDMB668P microfet 3x1.9 7? 8mm 3000 units microfet 3x1.9 pin 1 gate sourc e pin 1 gate sourc e 8 7 6 5 1 2 3 4 d d d s d d d g 8 7 6 5 1 2 3 4 d d d s d d d g
FDMB668P p-channel 1.8v logic level powertrench ? mosfet FDMB668P rev.b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = -250 p a, v gs = 0v -20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = -250 p a, referenced to 25 c -11.4 mv/ c i dss zero gate voltage drain current v ds = -16v, v gs = 0v -1 p a i gss gate to source leakage current v gs = 8v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 p a -0.4 -0.6 -1.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = -250 p a, referenced to 25 c 2.8 mv/ c r ds(on) static drain to source on resistance v gs = -4.5v, i d = -6.1a 22 35 m : v gs = -2.5v, i d = -5.1a 27 50 v gs = -1.8v, i d = -4.3a 35 70 v gs = -4.5v, i d = -6.1a,t j = 125 c 31 50 g fs forward transconductance v ds = -4.5v, i d = -6.1a 27 s (note 2) dynamic characteristics c iss input capacitance v ds = -10v, v gs = 0v, f = 1mhz 1565 2085 pf c oss output capacitance 210 280 pf c rss reverse transfer capacitance 175 265 pf switching characteristics t d(on) turn-on delay time v dd = -10v, i d = -6.1a v gs = -4.5v, r gen = 6 : 7 14 ns t r rise time 9 18 ns t d(off) turn-off delay time 176 282 ns t f fall time 84 135 ns q g total gate charge v gs = 0v to -10v v dd = -10v i d = -6.1a 42 59 nc q g total gate charge v gs = 0v to -5v 22 31 nc q gs gate to source gate charge 3 nc q gd gate to drain ?miller? charge 5 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = -1.6a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = -6.1a, di/dt = 100a/ p s 29 44 ns q rr reverse recovery charge 15 23 nc notes: 1: r t ja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as t he solder mounting surface of the drain pins. r t jc is guaranteed by design while r t ja is determined by the user?s board design. 2: pulse test: pulse width < 300 us, duty cycle < 2%. a) 65c/w when mounted on a 1in 2 pad of 2 oz copper b) 165c/w when mounted on a minimum pad .
FDMB668P p-channel 1.8v logic level powertrench ? mosfet FDMB668P rev.b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 012345 0 8 16 24 32 40 v gs = -1.8v v gs = -3.0v v gs = -1.5v v gs = -2.5v v gs = -4.5v pulse duration = 80 p s duty cycle = 0.5%max -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0 8 16 24 32 40 0.5 1.0 1.5 2.0 2.5 3.0 v gs = -4.5v v gs = -1.5v v gs = -2.5v v gs = -1.8v v gs = -3.0v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance -i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -6.1a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 12345 20 25 30 35 40 45 50 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d =-6.1a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) vdd = -5v figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMB668P p-channel 1.8v logic level powertrench ? mosfet FDMB668P rev.b www.fairchildsemi.com 4 figure 7. 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 v dd = -10v v dd = -15v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -5v id = -6.1a gate charge characteristics figure 8. 0.1 1 10 100 1000 5000 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 20 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 0.01 0.1 1 10 20 1ms 1s dc 10s 100ms 10ms r ds(on) limited single pulse t j = max rated r t ja = 165 o c/w t a = 25 o c -i d , drain current (a) -v ds , drain to source voltage (v) f o r w a r d b i a s s a f e operating area figure 10. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0 30 60 90 r t ja = 165 o c/w single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation figure 11. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 eak t j = p dm x z t ja x r t ja + t a transient thermal response curve typical characteristics t j = 25c unless otherwise noted
FDMB668P p-channel 1.8v logic level powertrench ? mosfet FDMB668P rev.b www.fairchildsemi.com 5
FDMB668P rev. b www.fairchildsemi.com 6 FDMB668P p-channel 1.8v logic level powertrench ? mosfet trademarks the following are registered and unregister ed trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make c hanges without further notice to any products herein to improve reliability, function or design. fairchil d does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these specific ations do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warrant y therein, which c overs these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably exp ected to result in signi ficant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perfor m can be reasonab ly expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datash eet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor re serves the right to make changes at any time without notice in order to improve design. no identification needed full production this data sheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed fo r reference information only. rev. i22
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